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| BUZ 73 L SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * Logic Level Pin 1 G Type BUZ 73 L Pin 2 D Pin 3 S VDS 200 V ID 7A RDS(on) 0.4 Package TO-220 AB Ordering Code C67078-S1328-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 7 Unit A ID IDpuls 28 TC = 28 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 7 6.5 mJ ID = 7 A, VDD = 50 V, RGS = 25 L = 3.67 mH, Tj = 25 C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 120 VGS Vgs Ptot 14 20 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 40 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 3.1 75 E 55 / 150 / 56 C K/W Semiconductor Group 1 07/96 BUZ 73 L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 1.6 0.1 10 10 0.3 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 200 V, VGS = 0 V, Tj = 25 C VDS = 200 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.4 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 3.5 A Semiconductor Group 2 07/96 BUZ 73 L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 5 6.5 630 120 60 - S pF 840 200 90 ns 15 20 VDS 2 * ID * RDS(on)max, ID = 3.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Rise time tr 60 90 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 100 130 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Fall time tf 40 50 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 73 L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.1 140 0.7 7 28 V 1.7 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 14 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 73 L Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 5 V 7.5 A 45 W 6.5 Ptot 35 30 25 20 15 10 5 0 0 ID 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A /I D t = 15.0s p ID 10 1 =V ZthJC 100 s 10 0 R DS (o n) DS 1 ms 10 -1 D = 0.50 0.20 10 0 10 ms 0.10 10 -2 0.05 0.02 single pulse DC 0.01 10 -1 10 0 10 1 10 2 V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 73 L Typ. output characteristics ID = (VDS) parameter: tp = 80 s 16 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 1.3 Ptot = 40W li g kj h f e VGS [V] a 2.0 1.1 a b c A ID 12 RDS (on) d b c 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VGS [V] = a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 7.0 j 8.0 k 10.0 10 d e f 8 c g h i j k 6 4 b l d fe hj kig 2 0 0 a 0.0 V 12 0 2 4 6 8 10 A 13 2 4 6 8 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 18 A parameter: tp = 80 s, VDS2 x ID x RDS(on)max 12 S 10 ID 14 12 10 8 6 4 2 0 0 gfs 9 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 10 12 VGS A ID 15 Semiconductor Group 6 07/96 BUZ 73 L Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 3.5 A, VGS = 5 V 1.3 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 1.1 RDS (on) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -20 20 60 100 C 160 VGS(th) 3.6 3.2 2.8 2.4 98% 98% typ 2.0 typ 1.6 2% 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 pF C 10 3 A IF 10 1 Ciss 10 2 Coss Crss 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 73 L Avalanche energy EAS = (Tj ) parameter: ID = 7 A, VDD = 50 V RGS = 25 , L = 3.67 mH 130 mJ 110 Typ. gate charge VGS = (QGate) parameter: ID puls = 63 A 16 V EAS 100 90 80 70 VGS 12 0,2 VDS max 0,8 VDS max 10 8 60 50 40 30 20 10 0 20 0 40 60 80 100 120 C 160 0 10 20 30 40 50 60 70 80 nC 100 4 6 2 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 73 L Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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